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| APM4835 P-Channel Enhancement Mode MOSFET Features * * * * -30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10V RDS(ON) = 24m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G SO - 8 S SS Ordering and Marking Information APM 4835 H a n d lin g C o d e Tem p. R ange P ackage C ode DD DD P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4835 APM 4835 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating -30 25 TA = 25C -8 -50 Unit V A Maximum Drain Current - Continuous Maximum Drain Current - Pulsed *Surface Mounted on FR4 Board, t 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM4835 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG RJA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25C TA = 100C (TA = 25C unless otherwise noted) Rating 2.5 1 150 -55 to 150 50 C C/W Unit W Electrical Characteristics Symbol Static BV DSS IDSS VGS(th) IGSS RDS(ON) VSD Dynamic Qg Q gs Q gd td(ON) tr td(OFF) tf Ciss Coss Crss Notes a b a (TA=25C unless otherwise noted) APM4835 Unit Min. Typa. Max. -30 -1 -1 -1.5 -2 100 16 24 -0.7 48 VDS= -15V, V GS= -10V, ID= -4.6A 10 9 16 VDD= -25V, ID= -2A, VGEN= -10V, RG=6 RL=12.5 VGS =0V, VDS =-25V Frequency = 1.0MHZ 17 75 31 3800 590 250 pF 30 30 120 80 ns 19 30 -1.3 60 nC V V A V nA m Parameter Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance b b VGS =0V, ID= -250A VDS= -30V, V GS=0V VDS=VGS, ID= -250A VGS = 25V , V DS=0V VGS = -10V, ID= -8A VGS = -4.5V, ID= -5A ISD= -3A, VGS =0V : Guaranteed by design, not subject to production testing : Pulse test ; pulse width 500s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM4835 Typical Characteristics Output Characteristics 50 -VGS=4,5,6,7,8,9,10V Transfer Characteristics 50 -ID-Drain Current (A) 30 -ID-Drain Current (A) 40 40 30 TJ=125C 20 -VGS=3V 20 TJ=25C TJ=-55C 10 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250A On-Resistance vs. Drain Current 0.05 -VGS(th)-Threshold Voltage (V) (Normalized) RDS(on)-On-Resistance () 1.25 0.04 -VGS=4.5V 0.03 1.00 0.02 -VGS=10V 0.75 0.01 0.50 -50 -25 0 25 50 75 100 125 150 0.00 0 10 20 30 40 50 Tj - Junction Temperature (C) -ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 3 www.anpec.com.tw APM4835 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.07 -ID=8A On-Resistance vs. Junction Temperature 1.8 -VGS=10V -ID=8A RDS(on)-On-Resistance () RDS(on)-On-Resistance () (Normalized) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 2 4 6 8 10 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 10 4500 -VDS=15V -ID=4.6A Capacitance Frequency=1MHz -VGS-Gate-Source Voltage (V) 8 3600 Capacitance (pF) Ciss 6 2700 4 1800 2 900 Coss Crss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 4 www.anpec.com.tw APM4835 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 30 Single Pulse Power 100 -IS-Source Current () 10 80 Power (W) 1.2 1.4 60 TJ=150C TJ=25C 1 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted D= 0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM4835 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 6 www.anpec.com.tw APM4835 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 APM4835 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 0.5 Po T1 12.4 0.2 P1 T2 2 0.2 Ao W 12 0. 3 Bo 5.2 0. 1 P 8 0.1 Ko E 1.750.1 t SOP- 8 F 5.5 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 2.1 0.1 0.30.013 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 www.anpec.com.tw APM4835 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw |
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